FDS6375 Series

P-Channel 2.5V Specified PowerTrench® MOSFFET -20V, -8A, 24mΩ

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFFET -20V, -8A, 24mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor FDS6375	-55 °C	175 ░C	Surface Mount	36 nC	20 V	8 A	2.5 V 4.5 V	1.5 V	P-Channel	8-SOIC	2694 pF	2.5 W	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	24 mOhm	8 V

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFFET -20V, -8A, 24mΩ

Key Features

-8.0 A, -20 V

• RDS(on)= 24 mΩ @ VGS= -4.5 V

• RDS(on)= 32 mΩ @ VGS= -2.5 V

• Low gate charge (26nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V)