High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅣ
| Part | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Technology | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | Vgs (Max) | Mounting Type | Package / Case | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 3000 pF | N-Channel | MOSFET (Metal Oxide) | TO-220 | 3.5 V | 150 °C | 30 V | Through Hole | TO-220-3 | 230 W | 10 V | 27.6 A | 110 mOhm | 75 nC | 650 V |