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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 4.5 V 10 V | 7.5 W 667 mW | 3.6 A | MOSFET (Metal Oxide) | 6-TSOP | 13.2 nC | 450 pF | 2.7 V | 60 mOhm | N-Channel | SC-74 SOT-457 | 175 °C | -55 °C | 20 V | Surface Mount | 60 V |