High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.38 Ω@10V, DFN 8 x 8, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.38 Ω@10V, DFN 8 x 8, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.38 Ω@10V, DFN 8 x 8, DTMOSⅣ
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 380 mOhm | 20 nC | 150 °C | 30 V | Surface Mount | 700 pF | 10 V | 4-DFN-EP (8x8) | N-Channel | MOSFET (Metal Oxide) | 9.7 A | 3.7 V | 600 V | 88.3 W | 4-VSFN Exposed Pad |