IPDQ60R Series

Manufacturer: INFINEON

Catalog

INFINEON’S ANSWER TO RESONANT HIGH POWER TOPOLOGIES

Part	Technology	Supplier Device Package	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Qualification	Grade	Vgs (Max)	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25░C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPDQ60R035CFD7XTMA1	MOSFET (Metal Oxide)	PG-HDSOP-22-1	Surface Mount	22-PowerBSOP Module	600 V
INFINEON IPDQ60R010S7AXTMA1	MOSFET (Metal Oxide)	PG-HDSOP-22-1	Surface Mount	22-PowerBSOP Module	600 V	10 mOhm	50 A	AEC-Q101	Automotive	20 V	N-Channel	694 W	-40 °C	150 °C	318 nC	4.5 V	12 V	11987 pF
INFINEON IPDQ60R040S7AXTMA1	MOSFET (Metal Oxide)	PG-HDSOP-22-1	Surface Mount	22-PowerBSOP Module	600 V	40 mOhm	14 A	AEC-Q101	Automotive	20 V	N-Channel	272 W	-40 °C	150 °C	83 nC		12 V		4.5 V
INFINEON IPDQ60R010S7XTMA1	MOSFET (Metal Oxide)	PG-HDSOP-22-1	Surface Mount	22-PowerBSOP Module	600 V	10 mOhm	50 A			20 V	N-Channel	694 W	-55 °C	150 °C	318 nC	4.5 V	12 V	11987 pF		50 A	▒20V
INFINEON IPDQ60R022S7AXTMA1	MOSFET (Metal Oxide)	PG-HDSOP-22-1	Surface Mount	22-PowerBSOP Module	600 V	22 mOhm	24 A	AEC-Q101	Automotive	20 V	N-Channel	416 W	-40 °C	150 °C	150 nC	4.5 V	12 V
INFINEON IPDQ60R017S7AXTMA1	MOSFET (Metal Oxide)	PG-HDSOP-22-1	Surface Mount	22-PowerBSOP Module	600 V	17 mOhm	30 A	AEC-Q101	Automotive	20 V	N-Channel	500 W	-40 °C	150 °C		4.5 V	12 V					196 nC	7370 pF
INFINEON IPDQ60R017S7XTMA1	MOSFET (Metal Oxide)	PG-HDSOP-22-1	Surface Mount	22-PowerBSOP Module	600 V	17 mOhm	30 A			20 V	N-Channel	500 W	-55 °C	150 °C		4.5 V	12 V					196 nC	7370 pF