Catalog
1200V, 15A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (2-pin package)
Beta
⌘K
1200V, 15A, THD, Silicon-carbide (SiC) SBD
1200V, 15A, THD, Silicon-carbide (SiC) SBD
| Part | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Supplier Device Package | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | No Recovery Time | 300 µA | 1.6 V | 175 °C | Through Hole | 790 pF | 0 ns | TO-220ACFP | TO-220-2 | 1.2 kV | 15 A | SiC (Silicon Carbide) Schottky |