High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 5.9 Ω@10V, DPAK, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 5.9 Ω@10V, DPAK, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 5.9 Ω@10V, DPAK, π-MOSⅧ
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Mounting Type | Operating Temperature | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 2 A | 80 W | Surface Mount | 150 °C | MOSFET (Metal Oxide) | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | 30 V | N-Channel | 900 V | 5.9 Ohm | DPAK | 12 nC | 500 pF |