Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L
| Part | Input Type | Current - Output / Channel [custom] | Mounting Type | Current - DC Forward (If) (Max) [Max] | Current Transfer Ratio (Max) [Max] | Number of Channels [custom] | Voltage - Forward (Vf) (Typ) | Current Transfer Ratio (Min) | Turn On / Turn Off Time (Typ) | Output Type | Rise / Fall Time (Typ) | Package / Case [custom] | Package / Case | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vce Saturation (Max) [Max] | Current Transfer Ratio (Max) | Current Transfer Ratio (Min) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 50 % | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | ||
 Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 1 | 1.25 V | 200 % | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | 400 % | ||
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 1 | 1.25 V | 200 % | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | 400 % | ||
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 200 % | 1 | 1.25 V | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | 100 % | ||
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 300 % | 1 | 1.25 V | 150 % | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | ||
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 50 % | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | ||
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | 100 % | ||
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 300 % | 1 | 1.25 V | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | 100 % | ||
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 50 % | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | ||
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 3 µs | Transistor | 2 µs 3 µs | 7.5 mm | 0.295 " 4 PC Pad | 6-SOIC | 6-SO 4 Lead | -55 C | 110 °C | 300 mV | 100 % |