FDBL9401-F085T6 Series

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 300 A, 0.55 mΩ

Catalog

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 300 A, 0.55 mΩ

Part	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Qualification	Rds On (Max) @ Id, Vgs	Grade	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDBL9401-F085	N-Channel	20 V	40 V	AEC-Q101	0.65 mOhm	Automotive	429 W	296 nC	8-HPSOF	Surface Mount	15900 pF	4 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-PowerSFN	300 A	10 V
ON Semiconductor FDBL9401-F085T6	N-Channel	-16 V 20 V	40 V	AEC-Q101	0.67 mOhm	Automotive			8-HPSOF	Surface Mount	10000 pF	4 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-PowerSFN	58.4 A		148 nC	4.3 W 180.7 W	240 A
ON Semiconductor FDBL9401L-F085	N-Channel	20 V	40 V	AEC-Q101	0.55 mOhm	Automotive	429 W	376 nC	8-HPSOF	Surface Mount	19550 pF	3 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-PowerSFN	300 A	4.5 V 10 V

Catalog

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 300 A, 0.55 mΩ

Key Features

• Typical RDS(on)= 0.47 mΩ at VGS= 10V, ID= 80 A

• Typical Qg(tot)= 269 nC at VGS= 10V, ID= 80 A

• UIS Capability

• Qualified to AEC Q101

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Description

Automotive Power MOSFET in a TOLL package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.