IR2235 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 44PLCC
| Part | Gate Type | Supplier Device Package | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Input Type | Driven Configuration | Logic Voltage - VIL, VIH | Number of Drivers | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Mounting Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Channel Type | Operating Temperature | Package / Case | High Side Voltage - Max (Bootstrap) [Max] | Package / Case [custom] | Package / Case [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 32 | 16.58 | 44-PLCC | 16.58 | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Surface Mount | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 44-LCC (J-Lead) 32 Leads | 1.2 kV | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 28-SOIC | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Surface Mount | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 28-SOIC | 1.2 kV | 0.295 " | 7.5 mm | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 32 | 16.58 | 44-PLCC | 16.58 | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Surface Mount | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 44-LCC (J-Lead) 32 Leads | 1.2 kV | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 32 | 16.58 | 44-PLCC | 16.58 | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Surface Mount | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 44-LCC (J-Lead) 32 Leads | 1.2 kV | ||||
INFINEON | IGBT MOSFET (N-Channel) | 28-DIP | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Through Hole | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 28-DIP | 1.2 kV | 15.24 mm | 0.6 in | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 28-SOIC | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Surface Mount | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 28-SOIC | 1.2 kV | 0.295 " | 7.5 mm | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 28-SOIC | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Surface Mount | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 28-SOIC | 1.2 kV | 0.295 " | 7.5 mm | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 32 | 16.58 | 44-PLCC | 16.58 | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Surface Mount | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 44-LCC (J-Lead) 32 Leads | 1.2 V | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 28-PDIP | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Through Hole | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 28-DIP | 1.2 kV | 15.24 mm | 0.6 in | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 32 | 16.58 | 44-PLCC | 16.58 | Inverting | Half-Bridge | 0.8 V 2 V | 6 | 250 mA | 500 mA | Surface Mount | 90 ns | 40 ns | 20 V | 10 VDC | 3-Phase | 125 ¯C | 44-LCC (J-Lead) 32 Leads | 1.2 kV |