SISHA12 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 22A/25A PPAK
| Part | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8SH | 2070 pF | -16 V 20 V | 45 nC | Surface Mount | MOSFET (Metal Oxide) | PowerPAK® 1212-8SH | 4.3 mOhm | 3.5 W 28 W | 4.5 V 10 V | N-Channel | 22 A 25 A | 2.2 V | -55 °C | 150 °C | 30 V |