FQAF1 Series

Catalog

MOSFET N-CH 600V 11.2A TO3PF

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Technology	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQAF19N60	-55 °C	150 °C	90 nC	5 V	TO-3PF	30 V	N-Channel	10 V	11.2 A	380 mOhm	3600 pF	TO-3P-3 Full Pack	MOSFET (Metal Oxide)	120 W	Through Hole	600 V
ON Semiconductor FQAF16N25C	-55 °C	150 °C		4 V	TO-3PF	30 V	N-Channel	10 V	11.4 A	270 mOhm		TO-3P-3 Full Pack	MOSFET (Metal Oxide)		Through Hole	250 V	1080 pF	53.5 nC	73 W
ON Semiconductor FQAF15N70	-55 °C	150 °C	90 nC	5 V	TO-3PF	30 V	N-Channel	10 V	9.5 A		3600 pF	TO-3P-3 Full Pack	MOSFET (Metal Oxide)	120 W	Through Hole	700 V				560 mOhm
ON Semiconductor FQAF16N25C	-55 °C	150 °C		4 V	TO-3PF	30 V	N-Channel	10 V	11.4 A	270 mOhm		TO-3P-3 Full Pack	MOSFET (Metal Oxide)		Through Hole	250 V	1080 pF	53.5 nC	73 W
ON Semiconductor FQAF11N40	-55 °C	150 °C	35 nC	5 V	TO-3PF	30 V	N-Channel	10 V	8.8 A	480 mOhm		TO-3P-3 Full Pack	MOSFET (Metal Oxide)	90 W	Through Hole	400 V	1400 pF
ON Semiconductor FQAF17P10	-55 °C	175 ░C	39 nC	4 V	TO-3PF	30 V	P-Channel	10 V	12.4 A	190 mOhm		TO-3P-3 Full Pack	MOSFET (Metal Oxide)		Through Hole	100 V	1100 pF		56 W
ON Semiconductor FQAF17P10	-55 °C	175 ░C	39 nC	4 V	TO-3PF	30 V	P-Channel	10 V	12.4 A	190 mOhm		TO-3P-3 Full Pack	MOSFET (Metal Oxide)		Through Hole	100 V	1100 pF		56 W
ON Semiconductor FQAF19N60	-55 °C	150 °C	90 nC	5 V	TO-3PF	30 V	N-Channel	10 V	11.2 A	380 mOhm	3600 pF	TO-3P-3 Full Pack	MOSFET (Metal Oxide)	120 W	Through Hole	600 V