NVH4L020N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
ON Semiconductor NVH4L020N120SC1	28 mOhm	102 A	4.3 V	220 nC	510 W	Through Hole	N-Channel	-55 °C	175 ░C	Automotive	TO-247-4L	-15 V	25 V	TO-247-4	AEC-Q101	2943 pF	1200 V

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L

Key Features

• Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A

• Qualified for Automotive According to AEC−Q101

• High Speed Switching and Low Capacitance

• Devices are Pb−Free and are RoHS Compliant

Description

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.