FDMS10C4D2N Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ

Part	Supplier Device Package	Package / Case	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
ON Semiconductor FDMS10C4D2N	8-PQFN (5x6)	8-PowerTDFN	20 V	125 W	-55 °C	150 °C	N-Channel	4.2 mOhm	Surface Mount	65 nC	100 V	MOSFET (Metal Oxide)	4500 pF	17 A	6 V 10 V	4 V

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 4.2 mΩ at VGS= 10 V, ID= 44 A

• Max rDS(on)= 14 mΩ at VGS= 6 V, ID= 22 A

• ADD

• 50% lower Qrrthan other MOSFET suppliers

• Lowers switching noise/EMI

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.