Catalog
200 V High Voltage Pin Diode
Key Features
• Long Reverse Recovery Timetrr= 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability
• Low Series Resistance @ 100 MHz -RS= 0.7 Ohms (Typ) @ IF= 10 mAdc
• Reverse Breakdown Voltage = 200 V (Min)
• Pb-Free Packages are Available
Description
AI
These devices are designed primarily for VHF band switching applications but are also suitable for use in general purpose switching circuits. They are supplied in a cost-effective plastic package for economical, high-volume consumer and industrial requirements. They are also available in surface mount.