SI8816 Series

Catalog

MOSFET N-CH 30V 4MICROFOOT

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI8816EDB-T2-E1	195 pF	500 mW	8 nC	N-Channel	10 V	2.5 V	4-XFBGA	30 V	MOSFET (Metal Oxide)	Surface Mount	109 mOhm	12 V	1.4 V	-55 °C	150 °C	1.5 A	4-Microfoot