High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 1.0 Ω@10V, TO-220SIS, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 1.0 Ω@10V, TO-220SIS, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 1.0 Ω@10V, TO-220SIS, DTMOSⅣ
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Supplier Device Package | Package / Case | FET Type | Vgs (Max) | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 650 V | 11 nC | 1 Ohm | 10 V | 150 °C | TO-220SIS | TO-220-3 Full Pack | N-Channel | 30 V | MOSFET (Metal Oxide) | Through Hole | 5.8 A | 3.5 V | 390 pF | |||
 Toshiba Semiconductor and Storage | 650 V | 1.11 Ohm | 10 V | 150 °C | TO-220SIS | TO-220-3 Full Pack | N-Channel | 30 V | MOSFET (Metal Oxide) | Through Hole | 6 A | 45 W | 1050 pF | 20 nC |