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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | FET Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Package / Case | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 72 pF | 8.5 Ohm | N-Channel | SOT-223-3 | 250 V | Surface Mount | 3.65 nC | MOSFET (Metal Oxide) | 10 V | 2.5 V | TO-261-4 TO-261AA | 2 W | -55 °C | 150 °C | 40 V | 310 mA |