SI2392 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 100V 3.1A SOT23-3
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) | FET Type | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10.4 nC | 1.25 W 2.5 W | -55 °C | 150 °C | 126 mOhm | 4.5 V 10 V | 3.1 A | Surface Mount | 20 V | N-Channel | SOT-23-3 (TO-236) | 3 V | 100 V | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 |