HCPL-814 Series
Manufacturer: Broadcom Limited
OPTOISOLATOR 5KV TRANSISTOR 4SMD
| Part | Current - Output / Channel [custom] | Vce Saturation (Max) [Max] | Current - DC Forward (If) (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current Transfer Ratio (Min) | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Output Type | Supplier Device Package | Current Transfer Ratio (Max) [Max] | Mounting Type | Voltage - Output (Max) [Max] | Package / Case | Number of Channels [custom] | Current Transfer Ratio (Max) | Current Transfer Ratio (Min) [Min] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 50 % | 4 µs | 3 µs | Transistor | 4-SMD | 150 % | Surface Mount | 35 V | 4-SMD Gull Wing | 1 | ||||
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 4 µs | 3 µs | Transistor | 4-SMD | Surface Mount | 35 V | 4-SMD Gull Wing | 1 | 300 % | 20 % | ||||
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 4 µs | 3 µs | Transistor | 4-SMD | Surface Mount | 35 V | 4-SMD Gull Wing | 1 | 300 % | 20 % | ||||
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 50 % | 4 µs | 3 µs | Transistor | 4-SMD | 150 % | Surface Mount | 35 V | 4-SMD Gull Wing | 1 | ||||
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 4 µs | 3 µs | Transistor | 4-DIP | Through Hole | 35 V | 4-DIP | 1 | 300 % | 20 % | 0.3 in | 7.62 mm | ||
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 50 % | 4 µs | 3 µs | Transistor | 4-DIP | 150 % | Through Hole | 35 V | 4-DIP | 1 | 0.3 in | 7.62 mm | ||
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 4 µs | 3 µs | Transistor | 4-SMD | Surface Mount | 35 V | 4-SMD Gull Wing | 1 | 300 % | 20 % | ||||
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 4 µs | 3 µs | Transistor | 4-DIP | Through Hole | 35 V | 4-DIP | 1 | 300 % | 20 % | 0.3 in | 7.62 mm | ||
Broadcom Limited | 50 mA | 200 mV | 50 mA | -30 ░C | 100 °C | 50 % | 4 µs | 3 µs | Transistor | 4-DIP | 150 % | Through Hole | 35 V | 4-DIP (0.400" 10.16mm) | 1 |