20ETF10 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

DIODE GEN PURP 1KV 20A TO263AB

Part	Package / Case	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-20ETF10STRL-M3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	400 ns	-40 °C	150 °C	100 µA	Surface Mount	1.31 V	200 mA 500 ns	1000 V	TO-263AB (D2PAK)
Vishay General Semiconductor - Diodes Division VS-20ETF10PBF	TO-220-2	Standard	160 ns	-40 °C	150 °C	100 µA	Through Hole	1.3 V	200 mA 500 ns	1000 V	TO-220AC
Vishay General Semiconductor - Diodes Division VS-20ETF10FPPBF	TO-220-2 Full Pack	Standard	400 ns	-40 °C	150 °C	100 µA	Through Hole	1.31 V	200 mA 500 ns	1000 V	TO-220AC Full Pack
Vishay General Semiconductor - Diodes Division VS-20ETF10SPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	95 ns	-40 °C	150 °C	100 µA	Surface Mount	1.31 V	200 mA 500 ns	1000 V	TO-263AB (D2PAK)
Vishay General Semiconductor - Diodes Division 20ETF10	TO-220-2	Standard	400 ns	-40 °C	150 °C	100 µA	Through Hole	1.31 V	200 mA 500 ns	1000 V	TO-220AC
Vishay General Semiconductor - Diodes Division 20ETF10FP	TO-220-2 Full Pack	Standard	400 ns			100 µA	Through Hole	1.31 V	200 mA 500 ns	1000 V	TO-220AC Full Pack
Vishay General Semiconductor - Diodes Division VS-20ETF10S-M3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	400 ns	-40 °C	150 °C	100 µA	Surface Mount	1.31 V	200 mA 500 ns	1000 V	TO-263AB (D2PAK)
Vishay General Semiconductor - Diodes Division VS-20ETF10STRLPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	95 ns	-40 °C	150 °C	100 µA	Surface Mount	1.31 V	200 mA 500 ns	1000 V	TO-263AB (D2PAK)