Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 47 kΩ/22 kΩ, SOT-363(US6)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 47 kΩ/22 kΩ, SOT-363(US6)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 47 kΩ/22 kΩ, SOT-363(US6)
| Part | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Package / Case | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Resistor - Base (R1) | Mounting Type | Frequency - Transition | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 22 kOhms | 70 hFE | 2 NPN - Pre-Biased (Dual) | SOT-563 SOT-666 | 300 mV | 100 mA | ES6 | 50 V | 100 nA | 47 kOhms | Surface Mount | 250 MHz | 100 mW |
 Toshiba Semiconductor and Storage | 22 kOhms | 70 hFE | 2 NPN - Pre-Biased (Dual) | 6-TSSOP SC-88 SOT-363 | 300 mV | 100 mA | US6 | 50 V | 500 nA | 47 kOhms | Surface Mount | 250 MHz | 200 mW |