US1J Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
| Part | Current - Average Rectified (Io) | Package / Case | Capacitance @ Vr, F | Technology | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Speed | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 1 A | DO-214AC SMA | 10 pF | Standard | 1.7 V | Surface Mount | 200 mA 500 ns | 5 µA | 75 ns | DO-214AC (SMA) | 600 V | -55 °C | 150 °C | ||
Taiwan Semiconductor Corporation | 1 A | DO-214AC SMA | 10 pF | Standard | 1.7 V | Surface Mount | 200 mA 500 ns | 5 µA | 75 ns | DO-214AC (SMA) | 600 V | -55 °C | 150 °C | AEC-Q101 | Automotive |
Taiwan Semiconductor Corporation | 1 A | DO-214AC SMA | 10 pF | Standard | 1.7 V | Surface Mount | 200 mA 500 ns | 5 µA | 75 ns | DO-214AC (SMA) | 600 V | -55 °C | 150 °C | AEC-Q101 | Automotive |