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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Rds On (Max) @ Id, Vgs | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 4.8 nC | 20 V | 140 pF | P-Channel | 350 mOhm | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | SOT-23-3 | 625 mW | 1 V | 4.5 V 10 V | -55 °C | 150 °C | 1.1 A | Surface Mount | 30 V |
Diodes Inc | 4.8 nC | 20 V | 140 pF | P-Channel | 350 mOhm | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | SOT-23-3 | 625 mW | 1 V | 4.5 V 10 V | -55 °C | 150 °C | 1.1 A | Surface Mount | 30 V |