SI4490 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 2.85A 8SO
| Part | Current - Continuous Drain (Id) @ 25°C | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.85 A | N-Channel | 200 V | 42 nC | 20 V | 8-SOIC | 80 mOhm | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 1.56 W | 2 V | -55 °C | 150 °C | Surface Mount | 6 V 10 V |