R6502END3 Series

650V 1.7A, TO-252 (DPAK), Low-noise Power MOSFET

Catalog

650V 1.7A, TO-252 (DPAK), Low-noise Power MOSFET

Part	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)
Rohm Semiconductor R6502END3TL1	N-Channel	TO-252	4 V	650 V	1.7 A	4 Ohm	20 V	6.5 nC	Surface Mount	150 °C	65 pF	MOSFET (Metal Oxide)	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	26 W

Catalog

650V 1.7A, TO-252 (DPAK), Low-noise Power MOSFET

Key Features

• Low on-resistance, Fast switching, Drive circuits can be simple, Parallel use is easy, Pb-free lead plating; RoHS compliant

Description

The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.