CSD17307Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.1 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.1 mOhm

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD17307Q5A	N-Channel	14 A 73 A	1.8 V	5.2 nC	10 V	-8 V	8-PowerTDFN	30 V	10.5 mOhm	8 V	3 V	8-VSONP (5x6)	Surface Mount	3 W	700 pF	MOSFET (Metal Oxide)	-55 °C	150 °C

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.1 mOhm

Key Features

• Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsOptimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing Systems

Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.