Catalog
Single N-Channel Power MOSFET 30V, 85A, 4.1mΩ
Key Features
• Low Capacitance
• Low RDS(on)
• Optimized Gate Charge
• Thermally Enhanced SO-8 Package
Description
AI
Power MOSFET 30 V, 85A, Single N-Channel,
Beta
⌘K
Single N-Channel Power MOSFET 30V, 85A, 4.1mΩ
Single N-Channel Power MOSFET 30V, 85A, 4.1mΩ
| Part | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Supplier Device Package | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Technology | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 2614 pF | N-Channel | -55 °C | 150 °C | 5-DFN (5x6) | 8-SOFL | 30 V | 48.4 W 880 mW | 28 nC | 2.5 V | Surface Mount | MOSFET (Metal Oxide) | 4.1 mOhm | 16 V | 4.5 V | 11.5 V | 11.5 A 85 A | 8-PowerTDFN 5 Leads |