MURTA400 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 400V 200A 3TOWER
| Part | Mounting Type | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Diode Configuration | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Speed [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Chassis Mount | 200 A | -55 °C | 150 °C | Standard | 1 Pair Common Anode | 400 V | Three Tower | Three Tower | 1.3 V | 25 µA | 200 mA 500 ns |
GeneSiC Semiconductor | Chassis Mount | 200 A | -55 °C | 150 °C | Standard | 1 Pair Common Cathode | 400 V | Three Tower | Three Tower | 1.3 V | 25 µA | 200 mA 500 ns |
GeneSiC Semiconductor | Chassis Mount | 200 A | -55 °C | 150 °C | Standard | 1 Pair Common Anode | 200 V | Three Tower | Three Tower | 1.3 V | 25 µA | 200 mA 500 ns |
GeneSiC Semiconductor | Chassis Mount | 200 A | -55 °C | 150 °C | Standard | 1 Pair Common Cathode | 600 V | Three Tower | Three Tower | 1.7 V | 25 µA | 200 mA 500 ns |
GeneSiC Semiconductor | Chassis Mount | 200 A | -55 °C | 150 °C | Standard | 1 Pair Common Anode | 600 V | Three Tower | Three Tower | 1.7 V | 25 µA | 200 mA 500 ns |