SI5504 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N/P-CH 30V 2.9A 1206-8
| Part | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Configuration | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 1206-8 ChipFET™ | 1 V | 85 mOhm | Logic Level Gate | 7.5 nC | 1.1 W | N and P-Channel | 30 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2.1 A 2.9 A | ||||
Vishay General Semiconductor - Diodes Division | Surface Mount | 1206-8 ChipFET™ | 3 V | 65 mOhm | Logic Level Gate | N and P-Channel | 30 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 7 nC | 220 pF | 3.1 W | 3.12 W |