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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Qualification | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Package / Case | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Grade | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 4 A | TO-236AB | AEC-Q101 | 49 mOhm | 8.3 W | 610 mW | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 10 nC | 679 pF | 12 V | Surface Mount | Automotive | 1.3 V | 2.5 V 8 V | 20 V | 175 °C | -55 °C | P-Channel |