FDP3672 Series

N-Channel PowerTrench® MOSFET 105V, 41A, 33mΩ

Catalog

N-Channel PowerTrench® MOSFET 105V, 41A, 33mΩ

Part	Package / Case	Supplier Device Package	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDP3672	TO-220-3	TO-220-3	135 W	MOSFET (Metal Oxide)	4 V	5.9 A 41 A	33 mOhm	20 V	N-Channel	-55 °C	175 ░C	1670 pF	Through Hole	6 V 10 V

N-Channel PowerTrench® MOSFET 105V, 41A, 33mΩ

• RDS(on)= 25mΩ (Typ.) @ VGS= 10V, ID= 41A

• QG(tot)= 28nC (Typ.) @ VGS= 10V

• Low Miller Charge

• Low QrrBody Diode

• Optimized Efficiency at High Frequencies

• UIS Capability (Single Pulse and Repetitive Pulse)

N-Channel PowerTrench®MOSFET 105 V, 41 A, 33 mΩ