SI4418 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 2.3A 8SO
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 130 mOhm | 20 V | 8-SOIC | 2.3 A | 8-SOIC | 3.9 mm | 0.154 in | 6 V 10 V | Surface Mount | 4 V | N-Channel | 30 nC | 200 V | 1.5 W | MOSFET (Metal Oxide) |