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30 V, 230 mA P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, 230 mA P-channel Trench MOSFET
30 V, 230 mA P-channel Trench MOSFET
| Part | Qualification | FET Type | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q101 | P-Channel | SC-59 SOT-23-3 TO-236-3 | 1.14 W 350 mW | 0.72 nC | TO-236AB | 1.1 V | 30 V | 4.1 Ohm | 8 V | MOSFET (Metal Oxide) | 230 mA | Surface Mount | 2.5 V | 4.5 V | 46 pF | 150 °C | -55 °C | Automotive |