High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 4.9 Ω@10V, DPAK, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 4.9 Ω@10V, DPAK, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 4.9 Ω@10V, DPAK, π-MOSⅧ
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) [Max] | FET Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 12 nC | MOSFET (Metal Oxide) | 10 V | 30 V | 4.9 Ohm | 500 pF | 3 A | Surface Mount | 150 °C | 4 V | 800 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 80 W | N-Channel | DPAK |