TK12J60 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 600V 11.5A TO3P
| Part | Rds On (Max) @ Id, Vgs [Max] | FET Type | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case | Operating Temperature | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 300 mOhm | N-Channel | MOSFET (Metal Oxide) | 890 pF | Through Hole | 110 W | 600 V | 3.7 V | 25 nC | 10 V | TO-3P(N) | SC-65-3 TO-3P-3 | 150 °C | 30 V | 11.5 A |