SIHF35 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CHANNEL 600V 32A TO220
| Part | Mounting Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Technology | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Through Hole | 4 V | 10 V | -55 °C | 150 °C | 94 mOhm | 600 V | N-Channel | MOSFET (Metal Oxide) | 30 V | 39 W | TO-220 Full Pack | 32 A | 2760 pF | TO-220-3 Full Pack | 132 nC |