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80 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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80 V, N-channel Trench MOSFET
80 V, N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Qualification | Grade | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | FET Type | Package / Case | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 175 °C | -55 °C | 230 mOhm | AEC-Q101 | Automotive | 7.2 nC | DFN2020MD-6 | Surface Mount | 4.5 V 10 V | 215 pF | 2.7 V | MOSFET (Metal Oxide) | 80 V | 20 V | 2 W 15 W | N-Channel | 6-UDFN Exposed Pad | 1.9 A 5.1 A |