DTDG23YP Series
Manufacturer: Rohm Semiconductor
NPN, SOT-89, R1≠R2 LEAK ABSORPTION TYPE DIGITAL TRANSISTOR (BIAS RESISTOR BUILT-IN TRANSISTOR)
| Part | Resistor - Emitter Base (R2) | Package / Case | Current - Collector (Ic) (Max) [Max] | Resistor - Base (R1) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Supplier Device Package | Power - Max [Max] | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 22 kOhms | TO-243AA | 1 A | 2.2 kOhm | 400 mV | 500 nA | 80 MHz | MPT3 | 1.5 W | NPN - Pre-Biased | 300 | Surface Mount | 60 V |