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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Vgs (Max) [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | P-Channel | 1.2 V | 4.5 V | Surface Mount | 950 mV | 36 pF | DFN0606-3 | 8 V | 3-XFDFN | 1.4 Ohm | 150 °C | -55 °C | 2.2 W | 370 mW | MOSFET (Metal Oxide) | 20 V | 0.5 nC | 530 mA |