FCPF260N60E Series

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F

Part	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCPF260N60E	MOSFET (Metal Oxide)	260 mOhm	600 V	-55 °C	150 °C	20 V	Through Hole	TO-220-3 Full Pack	TO-220F-3	2500 pF	N-Channel	15 A	62 nC	3.5 V	36 W	10 V

Catalog

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F

Key Features

• 650 V at TJ= 150°C

• Maximum RDS(on)= 260 mΩ

• Ultra Low Gate Charge ( Typ. Qg= 48 nC )

• Low Effective Output Capacitance ( Typ. Coss.eff = 129 pF )

• 100% Avalanche Tested

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.