SSM3J355 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -6.0 A, 0.0301 Ω@4.5V, SOT-23F
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | FET Type | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1.8 V | 4.5 V | 1 V | Surface Mount | 6 A | 1 W | P-Channel | MOSFET (Metal Oxide) | 16.6 nC | SOT-23-3 Flat Leads | 20 V | 150 °C | 10 V | 1030 pF | SOT-23F | 30.1 mOhm |