SIA813 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 4.5A PPAK SC70-6
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) | FET Feature | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1 V | 1.9 W 6.5 W | Schottky Diode (Isolated) | 20 V | PowerPAK® SC-70-6 Dual | 8 V | PowerPAK® SC-70-6 Dual | 1.8 V 4.5 V | 355 pF | 4.5 A | Surface Mount | 94 mOhm | 13 nC | P-Channel | MOSFET (Metal Oxide) | -55 °C | 150 °C |