TLP781F Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
PHOTOCOUPLER
| Part | Package / Case | Rise / Fall Time (Typ) | Number of Channels [custom] | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Forward (Vf) (Typ) | Output Type | Input Type | Vce Saturation (Max) [Max] | Current - Output / Channel [custom] | Current Transfer Ratio (Min) [Min] | Current - DC Forward (If) (Max) [Max] | Current Transfer Ratio (Max) [Max] | Supplier Device Package | Turn On / Turn Off Time (Typ) | Mounting Type | Current Transfer Ratio (Max) | Current Transfer Ratio (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4-DIP (0.400" 10.16mm) | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 100 % | 60 mA | 300 % | 4-DIP | 3 µs | Through Hole | ||
Toshiba Semiconductor and Storage | 4-DIP (0.400" 10.16mm) | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 60 mA | 4-DIP | 3 µs | Through Hole | 400 % | 200 % | ||
Toshiba Semiconductor and Storage | 4-DIP (0.400" 10.16mm) | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 60 mA | 4-DIP | 3 µs | Through Hole | 150 % | 50 % | ||
Toshiba Semiconductor and Storage | 4-DIP (0.400" 10.16mm) | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 60 mA | 300 % | 4-DIP | 3 µs | Through Hole | 150 % | ||
 Toshiba Semiconductor and Storage | 4-SMD Gull Wing | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 60 mA | 4-SMD | 3 µs | Surface Mount | 150 % | 50 % | ||
Toshiba Semiconductor and Storage | 4-DIP (0.400" 10.16mm) | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 100 % | 60 mA | 600 % | 4-DIP | 3 µs | Through Hole | ||
Toshiba Semiconductor and Storage | 4-DIP (0.400" 10.16mm) | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 100 % | 60 mA | 200 % | 4-DIP | 3 µs | Through Hole | ||
Toshiba Semiconductor and Storage | 4-SMD Gull Wing | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 60 mA | 600 % | 4-SMD | 3 µs | Surface Mount | 200 % | ||
Toshiba Semiconductor and Storage | 4-DIP (0.400" 10.16mm) | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 100 % | 60 mA | 600 % | 4-DIP | 3 µs | Through Hole | ||
Toshiba Semiconductor and Storage | 4-DIP (0.400" 10.16mm) | 2 µs 3 µs | 1 | -55 C | 110 °C | 1.15 V | Transistor | DC | 400 mV | 50 mA | 60 mA | 600 % | 4-DIP | 3 µs | Through Hole | 50 % |