High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.018 Ω@10V, TO-3P(L), DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.018 Ω@10V, TO-3P(L), DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.018 Ω@10V, TO-3P(L), DTMOSⅣ
| Part | Vgs(th) (Max) @ Id | Mounting Type | Technology | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 3.7 V | Through Hole | MOSFET (Metal Oxide) | 600 V | N-Channel | 30 V | 360 nC | 15000 pF | 18 mOhm | 10 V | TO-3PL | 797 W | 150 °C | 100 A | TO-3P(L) |