BSC009 Series

Manufacturer: INFINEON

Catalog

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 0.9 MOHM; WIDE SOA

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON BSC009NE2LSATMA1	41 A 100 A 255 A	N-Channel	PG-TDSON-8-7	Surface Mount	0.9 mOhm	150 °C	-55 °C	126 nC	MOSFET (Metal Oxide)	25 V	4.5 V 10 V	2.2 V	2.5 W 96 W	5800 pF	8-PowerTDFN	20 V
INFINEON BSC009N04LSSCATMA1	301 A	N-Channel	PG-WSON-8-2	Surface Mount	1.24 mOhm	175 °C	-55 °C	133 nC	MOSFET (Metal Oxide)	40 V	4.5 V 10 V	2 V	167 W	9520 pF	8-PowerWDFN	20 V
INFINEON BSC009NE2LS5IATMA1	40 A 100 A 217 A	N-Channel	PG-TDSON-8-7	Surface Mount	0.95 mOhm	150 °C	-55 °C		MOSFET (Metal Oxide)	25 V	4.5 V 10 V	2 V			8-PowerTDFN	16 V	2.5 W	74 W	49 nC	3200 pF
INFINEON BSC009NE2LS5ATMA1	41 A 100 A 223 A	N-Channel	PG-TDSON-8-7	Surface Mount	0.9 mOhm	150 °C	-55 °C	57 nC	MOSFET (Metal Oxide)	25 V	4.5 V 10 V	2 V			8-PowerTDFN	16 V	2.5 W	74 W		3900 pF