SI4952 Series

Catalog

MOSFET 2N-CH 25V 8A 8SOIC

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Feature	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Configuration	Technology	Power - Max [Max]
Vishay General Semiconductor - Diodes Division SI4952DY-T1-GE3	8-SOIC	25 V	Logic Level Gate	8 A	-55 °C	150 °C	680 pF	8-SOIC	3.9 mm	0.154 in	2.2 V	18 nC	23 mOhm	Surface Mount	2 N-Channel (Dual)	MOSFET (Metal Oxide)	2.8 W
Vishay General Semiconductor - Diodes Division SI4952DY-T1-E3	8-SOIC	25 V	Logic Level Gate	8 A	-55 °C	150 °C	680 pF	8-SOIC	3.9 mm	0.154 in	2.2 V	18 nC	23 mOhm	Surface Mount	2 N-Channel (Dual)	MOSFET (Metal Oxide)	2.8 W