BS170 Series
Manufacturer: ON Semiconductor
SINGLE N-CHANNEL SMALL SIGNAL MOSFET 60V, 500MA, 5Ω
| Part | Vgs (Max) | Power Dissipation (Max) [Max] | Package / Case | Supplier Device Package | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 20 V | 350 mW | TO-226-3 TO-92-3 Long Body | TO-92 | TO-226 | 5 Ohm | -55 °C | 150 °C | 500 mA | Through Hole | 3 V | 60 pF | N-Channel | MOSFET (Metal Oxide) | 10 V | 60 V |
ON Semiconductor | 20 V | 350 mW | Formed Leads TO-226-3 TO-92-3 Long Body | TO-92 | TO-226 | 5 Ohm | -55 °C | 150 °C | 500 mA | Through Hole | 3 V | 60 pF | N-Channel | MOSFET (Metal Oxide) | 10 V | 60 V |
ON Semiconductor | 20 V | 350 mW | Formed Leads TO-226-3 TO-92-3 Long Body | TO-92 | TO-226 | 5 Ohm | -55 °C | 150 °C | 500 mA | Through Hole | 3 V | 60 pF | N-Channel | MOSFET (Metal Oxide) | 10 V | 60 V |
ON Semiconductor | 20 V | 350 mW | Formed Leads TO-226-3 TO-92-3 Long Body | TO-92 | TO-226 | 5 Ohm | -55 °C | 150 °C | 500 mA | Through Hole | 3 V | 60 pF | N-Channel | MOSFET (Metal Oxide) | 10 V | 60 V |