IPT111 Series
Manufacturer: INFINEON
Beta
⌘K
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; TOLL HSOF-8 PACKAGE; 11.1 MOHM; FAST DIODE
| Part | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 11.1 mOhm | N-Channel | 20 V | 10 V | 96 A | 375 W | MOSFET (Metal Oxide) | Surface Mount | 200 V | 7000 pF | 8-PowerSFN | 175 °C | -55 °C | PG-HSOF-8-1 | 87 nC | 4 V |