Catalog
60 V, N-channel Trench MOSFET
| Part | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | 20 V | 196 pF | 2.7 V | 60 V | Surface Mount | 117 mOhm | MOSFET (Metal Oxide) | 2.2 A | TO-236AB | N-Channel | 7.5 W 615 mW | 6 nC | 175 °C | -55 °C | 4.5 V 10 V |
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.